SG15N12P, SG15N12DP
Discrete IGBTs
Dimensions TO-220AB
E
C
G
G=Gate, C=Collector, E=Emitter
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
SG15N12P
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
SG15N12DP
Test Conditions
Maximum Ratings
1200
1200
±20
±30
30
15
60
I
CM
=40
@ 0.8 V
CES
150
-55...+150
150
-55...+150
Unit
V
V
T
J
=25
o
C to 150
o
C
T
J
=25
o
C to 150
o
C; R
GE
=1 M ;
Continuous
Transient
T
C
=25
o
C
T
C
=90
o
C
T
C
=25
o
C, 1 ms
A
A
W
o
V
GE
=15V; T
VJ
=125
o
C; R
G
=10
(RBSOA)
Clamped inductive load
P
C
T
C
=25
o
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
M
d
Weight
Mounting torque with screw M3
Mounting torque with screw M3.5
C
300
0.45/4
0.55/5
4
o
C
Nm/Ib.in.
g
(T
J
=25
o
C,
unless otherwise specified)
Symbol
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
Test Conditions
I
C
=250uA; V
GE
=0V
I
C
=250uA; V
CE
=V
GE
V
CE
=V
CES
;
V
GE
=0V;
T
J
=25
o
C
T
J
=125
o
C
Characteristic Values
min.
600
2.5
5.0
100
3.5
±100
3.2
typ.
max.
V
V
uA
mA
nA
V
Unit
V
CE
=0V; V
GE
=±20V
I
C
=I
C90
; V
GE
=15V
SG15N12P, SG15N12DP
Discrete IGBTs
(T
J
=25
o
C,
unless otherwise specified)
Symbol
Test Conditions
Characteristic Values
min.
g
ts
I
C
=I
C90
; V
CE
=10V
Pulse test, t
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
Reverse Diode (FRED)
Symbol
Test Conditions
0.5
Inductive load, T
J
=25
o
C
I
C
=I
C90
; V
GE
=15V;
V
CE
=960V; R
G
=R
off
=10
Remarks:Switching times may increase
for V
CE
(Clamp) 0.8V
CES'
higher T
J
or
increased R
G
Inductive load, T
J
=125
o
C
I
C
=I
C90
; V
GE
=15V;
V
CE
=960V; R
G
=R
off
=10
Remarks:Switching times may increase
for V
CE
(Clamp)
increased R
G
0.8V
CES'
higher T
J
or
I
C
=I
C90
; V
GE
=15V; V
CE
=0.5V
CES
V
CE
=25V; V
GE
=0V; f=1MHz
300us, duty cycle
2%
1720
95
35
69
13
26
25
15
180
160
1.75
25
18
0.60
300
360
3.5
0.83
280
320
3.0
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
K/W
K/W
nC
pF
12
typ.
15
max.
S
Unit
(T
J
=25
o
C,
unless otherwise specified)
Characteristic Values
min.
typ.
2.6
2.1
max.
2.8
33
20
15
200
40
1.6
V
A
A
ns
K/W
Unit
V
F
I
F
I
RM
t
rr
R
thJC
I
F
=20A; V
GE
=0V
I
F
=20A; V
GE
=0V; T
J
=125
o
C
T
C
=25
o
C
T
C
=90
o
C
I
F
=20V; -di
F
/dt=400A/us; V
R
=600V
V
GE
=0V; T
J
=125
o
C
I
F
=1A; -di
F
/dt=100A/us; V
R
=30V; V
GE
=0V
